copyright ? 2002 semicoa semiconductors, inc. rev. d 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 2 www. semicoa .com 2N5660 silicon npn transisto r data sheet description semicoa semiconductors offers: ? screening and processing per mil-prf-19500 appendix e ? jan level (2N5660j) ? jantx level (2N5660jx) ? jantxv level (2N5660jv) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 method 2072 for jantxv ? radiation testing (total dose) upon request please contact semicoa for special configurations www. semicoa .com or (714) 979-1900 applications ? general purpose ? power transistor ? npn silicon transistor features ? hermetically sealed to-66 metal can ? also available in chip configuration ? chip geometry 1031 ? reference document: mil-prf-19500/454 benefits ? qualification levels: jan, jantx, and jantxv ? radiation testing available absolute maximum ratings t c = 25 c unless otherwise specified parameter symbol rating unit collector-emitter voltage v ceo 200 volts collector-base voltage v cbo 250 volts emitter-base voltage v ebo 6 volts collector current, continuous i c 2 a power dissipation, t a = 25 c derate linearly above 25 c p t 2 11.4 w mw/ c power dissipation, t c = 25 c derate linearly above 100 c p t 20 200 w mw/ c operating junction temperature storage temperature t j t stg -65 to +200 c
copyright ? 2002 semicoa semiconductors, inc. rev. d 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. semicoa .com 2N5660 silicon npn transisto r data sheet electrical characteristics characteristics specified at t a = 25 c off characteristics parameter symbol test conditions min typ max units collector-emitter breakdown voltage v (br)ceo i c = 10 ma 200 volts collector-emitter breakdown voltage v (br)cer i c = 10 ma, r be = 100 ? 250 volts emitter-base breakdown voltage v (br)ebo i e = 10 a 6 volts collector-base cutoff current i cbo1 i cbo2 v cb = 200 volts v cb = 250 volts 0.1 1.0 a ma collector-emitter cutoff current i ces1 i ces2 v ce = 200 volts v ce = 200 volts, t a = 150 c 0.2 100 a on characteristics pulse test: pulse width = 300 s, duty cycle 2.0% parameter symbol test conditions min typ max units dc current gain h fe1 h fe2 h fe3 h fe4 h fe5 i c = 50 ma, v ce = 2 volts i c = 500 ma, v ce = 5 volts i c = 1 a, v ce = 5 volts i c = 2 a, v ce = 5 volts i c = 500 ma, v ce = 5 volts t a = -55 c 40 40 15 5 15 120 base-emitter saturation voltage v besat1 v besat2 i c = 1 a, i b = 100 ma i c = 2 a, i b = 400 ma 1.2 1.5 volts collector-emitter saturation voltage v cesat1 v cesat2 i c = 1 a, i b = 100 ma i c = 2 a, i b = 400 ma 0.4 0.8 volts dynamic characteristics parameter symbol test conditions min typ max units magnitude ? common emitter, short circuit forward curre nt transfer ratio |h fe | v ce = 5 volts, i c = 100 ma, f = 10 mhz 2 7 open circuit output capacitance c obo v cb = 10 volts, i e = 0 ma, 100 khz < f < 1 mhz 45 pf switching characteristics parameter symbol test conditions min typ max units saturated turn-on time t on i c = 500 ma, v cc = 100 volts 250 ns saturated turn-off time t off i c = 500 ma, v cc = 100 volts 850 ns
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